ace 3926e dual n - channel 20 - v mosfet ver 1.1 1 description the ACE3926E utilize a high cell density trench process to provide low r ds (on) and to ensure minimal power loss and heat dissipation. typical applications are dc - dc converters and power management in portable and battery - powered products such as computers, printers, pcmcia cards, cellular and cordless telephones . features ? low r ds (on) trench technology ? low thermal impedance ? fast switching speed applications ? power routing ? li ion battery packs ? level shifting and driver circuits absolute maximu m ratings parameter symbol limit unit s drain - source voltage v ds 20 v gate - source voltage v gs 12 v continuous drain current a t a =25 i d 13 a t a = 70 10 pulsed drain current b i dm 50 a continuous source current (diode conduction) a i s 7 a power di ssipation a t a =25 p d 2.5 w t a = 70 1.5 operating temperature / storage temperature t j /t stg - 55~150 thermal resistance ratings parameter symbol maxim um units maximum junction - to - ambient a t <= 10 sec r ja 83 c/w steady state 120 notes a. s urface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature
ace 3926e dual n - channel 20 - v mosfet ver 1.1 2 packaging type dfn3*3 - 8l ordering i nformation ACE3926E nn + h nn : dfn3*3 - 8l pb - free halogen - free
ace 3926e dual n - channel 20 - v mosfet ver 1.1 3 electrical characteristics t a =25 , u nless otherwise specified. parameter symbol test conditions min typ max unit static g at e - s o u rc e t hre s h ol d v o l ta g e v gs(th) v d s = v gs , i d = 2 5 0 ua 0.4 v g at e - b o d y l e a k a g e i gss v d s = 0 v , v g s = 12 v 10 na zero g ate v o l ta g e dra i n c u rre n t i dss v d s = 16 v , v g s = 0 v 1 ua v d s = 16v , v g s = 0 v , t j = 5 5 c 10 o n - st a te d r a i n c u rre n t a i d(o n) v d s = 5 v , v g s = 4.5 v 20 a d r a i n - s o ur c e on - re s i s ta n c e a r ds(on) v g s = 4.5 v i d = 2 a 10 m v g s = 2 .5 v , i d = 1.6 a 14 for w ard t r a n sco n d u c ta n c e a g fs v d s = 15 v , i d = 2 a 3 s d i o d e for w ard v o l ta g e v sd i s = 3 . 5 a , v g s = 0 v 0.8 v d y namic b t ot a l g ate ch a r ge q g v d s = 1 0 v , v g s = 4. 5 v , i d = 2 a 15 nc g at e - s o u rc e c h arge q gs 1.9 g at e - d r a i n c h arge q gd 3.7 t urn - o n d el ay t i m e t d(on) v d s = 10 v , r l = 5 , i d = 2 a , v g e n = 4.5 v , r g e n = 6 , 178 ns r i s e t i m e t r 332 t urn - o f f de l ay t i m e t d(off) 1939 fa l l t i m e t f 902 input capacitance c iss v ds = 1 5 v, v gs = 0 v, f = 1 mhz 1225 pf output capacitance c oss 151 reverse transfer capacitance c rss 123 note : a. pulse test: pw <= 300us duty cycle <= 2%. b. guaranteed by design, no t subject to production testing
ace 3926e dual n - channel 20 - v mosfet ver 1.1 4 typical performance characteristics id - drain current (a) vgs - gate - to - source voltage (v) 1. on - resistance vs. drain current 2. transfer characteristics vgs - gate - to - source voltage (v) v gs - gate - to - source voltage (v) 3. on - resistance vs. gate - to - source voltage 4. drain - to - source forward voltage vds - drain - to - source voltage (v) vds - drain - to - source voltage (v) 5. output characteristics 6. capacitance
ace 3926e dual n - channel 20 - v mosfet ver 1.1 5 typical performance characteristics qg - total gate charge (nc) v ds (v) 7. gate charge 8. normalized on - resistance vs junction temperature vds drain to source voltage (v) t1 time (sec) 9. safe operating area 10.single pulse maximum power dissipation t1 time (sec) 11. normalized thermal transient junction to ambien t
ace 3926e dual n - channel 20 - v mosfet ver 1.1 6 packing information dfn3*3 - 8l unit: mm symbols dimensions in millimeters diensions in inches min nom max min nom max a 0.700 0.80 0.900 0.0276 0.0315 0.0354 a1 0.00 0.05 0.000 0.002 b 0.24 0 .30 0.35 0.009 0.012 0.014 c 0 .08 0.152 0.25 0.003 0.006 0.010 d 2.90 bsc 0.114 bsc e 2.80 bsc 0.110 bsc e1 2.30 bsc 0.091 bsc e 0.65 bsc 0.026 bsc l 0.20 0.375 0.450 0.008 0.0148 0.0177 l1 0 0.100 0 0.004 1 0 10 12 0 10 12
ace 3926e dual n - channel 20 - v mosfet ver 1.1 7 notes ace does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ace electronics co., l td. as sued herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use p rovided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ace technology co., ltd. http://www.ace - ele.com/
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